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 ZXTP2012A
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION
Packaged in the E-line outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEATURES
* 3.5 amps continuous current * Up to 15 amps peak current * Very low saturation voltages * Excellent gain up to 10 amps
E-line
APPLICATIONS
* DC - DC converters * MOSFET gate drivers * Power switches * Motor control
ORDERING INFORMATION
DEVICE ZXTP2012ASTOA ZXTP2012ASTZ QUANTITY PER REEL 2,000 units / reel 2,000 units / carton
PINOUT
DEVICE MARKING
ZXT P20 12
TOP VIEW
ISSUE 2 - NOVEMBER 2005 1
SEMICONDUCTORS
ZXTP2012A
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Practical power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT -100 -60 -7 -3.5 -15 1.0 8 0.71 5.7 -55 to 150 UNIT V V V A A W mW/C W mW/C C
THERMAL RESISTANCE
PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL R JA R JA VALUE 125 175 UNIT C/W C/W
NOTES (a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Collector lead length to solder point 4mm. (b) For a device mounted in a socket in still air conditions. Collector lead length 10mm.
ISSUE 2 - NOVEMBER 2005
SEMICONDUCTORS
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ZXTP2012A
CHARACTERISTICS
ISSUE 2 - NOVEMBER 2005 3
SEMICONDUCTORS
ZXTP2012A
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CER BV CEO BV EBO I CBO I CER R 1k I EBO V CE(SAT) 1 -14 -50 -80 -145 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) h FE 100 100 65 10 Transition frequency Output capacitance Switching times fT C OBO t ON t OFF * Measured under pulsed conditions. Pulse width -960 -850 250 200 120 25 120 48 39 370 300 s; duty cycle 2%. 300 MIN. -100 -100 -60 -7 TYP. -120 -120 -80 -8.1 1 1 -20 -0.5 -20 -0.5 -10 -20 -65 -115 -210 -1060 -960 MAX. UNIT CONDITIONS V V V V nA A nA A nA mV mV mV mV mV mV I C =-100 A I C =-1 A, RB 1k I C =-10mA* I E =-100 A V CB =-80V VCB=-80V, Tamb=100 C V CB =-80V VCB=-80V, Tamb=100 C V EB =-6V I C =-0.1A, I B =-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* I C =-4A, I B =-400mA* I C =-4A, V CE =-1V* I C =-10mA, V CE =-1V* IC=-1A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* MHz I C =-100mA, VCE =-10V f=50MHz pF ns V CB =-10V, f=1MHz* I C =-1A, V CC =-10V, I B1 =I B2 =-100mA
ISSUE 2 - NOVEMBER 2005
SEMICONDUCTORS
4
ZXTP2012A
TYPICAL CHARACTERISTICS
ISSUE 2 - NOVEMBER 2005 5
SEMICONDUCTORS
ZXTP2012A
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters DIM Min A B C D E F G L 0.41 0.41 3.61 4.37 2.16 -- Max 0.495 0.495 4.01 4.77 2.41 2.50 Min 0.016 0.016 0.142 0.172 0.085 -- Max 0.0195 0.0195 0.158 0.188 0.095 0.098 Inches
1.27 NOM 13.00 13.97
0.050 NOM 0.512 0.550
(c) Zetex Semiconductors plc 2005
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com
ISSUE 2 - NOVEMBER 2005
SEMICONDUCTORS
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